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HM3416B Datasheet, H&M Semiconductor

HM3416B mosfet equivalent, n-channel enhancement mode power mosfet.

HM3416B Avg. rating / M : 1.0 rating-13

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HM3416B Datasheet

Features and benefits


* VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.

Application

.It is ESD protested. General Features
* VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD R.

Description

The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features.

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